Field Effect Devices Sensitive to CO at Room Temperature

Autores
Aragon, Ricardo; Lombardi, Rina
Año de publicación
2014
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
[5,10,15-Tris(2,6-dichlorophenyl)corrolate]cobalt(III) was used to chemisorb CO selectively, on the gap-gate of MOS capacitors and the state of charge monitored by voltage shifts of the photocurrent induced by pulsed illumination under constant D.C. bias, proportionally to CO concentration in air. Negative chemically induced charges at room temperature induce positive responses above and negative shifts below the threshold voltage, conforming to acceptor behavior, and the dynamic range (125 ppm) is limited by the silicon doping concentration. The linear proportionality between CO concentration and surface charge (6.46 [ppm.m2.µC-1]) corresponds to the low concentration limit of the Langmuir isotherm. Sluggish CO desorption can be compensated by photo stimulation at 395 nm.
Fil: Aragon, Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Unidad de Investigación y Desarrollo Estratégico para la Defensa. Ministerio de Defensa. Unidad de Investigación y Desarrollo Estratégico para la Defensa; Argentina. Universidad de Buenos Aires. Facultad de Ingeniería. Departamento de Física; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina
Fil: Lombardi, Rina. Universidad de Buenos Aires. Facultad de Ingeniería. Departamento de Física; Argentina
Materia
Co
Fet Sensor
Room Temperature
Co-Corrole
Photodesorption
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/30150
Acceder
id CONICETDig_37628ec987c9409acf34f022000717a5
oai_identifier_str oai:ri.conicet.gov.ar:11336/30150
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Field Effect Devices Sensitive to CO at Room TemperatureAragon, RicardoLombardi, RinaCoFet SensorRoom TemperatureCo-CorrolePhotodesorptionhttps://purl.org/becyt/ford/2.5https://purl.org/becyt/ford/2[5,10,15-Tris(2,6-dichlorophenyl)corrolate]cobalt(III) was used to chemisorb CO selectively, on the gap-gate of MOS capacitors and the state of charge monitored by voltage shifts of the photocurrent induced by pulsed illumination under constant D.C. bias, proportionally to CO concentration in air. Negative chemically induced charges at room temperature induce positive responses above and negative shifts below the threshold voltage, conforming to acceptor behavior, and the dynamic range (125 ppm) is limited by the silicon doping concentration. The linear proportionality between CO concentration and surface charge (6.46 [ppm.m2.µC-1]) corresponds to the low concentration limit of the Langmuir isotherm. Sluggish CO desorption can be compensated by photo stimulation at 395 nm.Fil: Aragon, Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Unidad de Investigación y Desarrollo Estratégico para la Defensa. Ministerio de Defensa. Unidad de Investigación y Desarrollo Estratégico para la Defensa; Argentina. Universidad de Buenos Aires. Facultad de Ingeniería. Departamento de Física; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; ArgentinaFil: Lombardi, Rina. Universidad de Buenos Aires. Facultad de Ingeniería. Departamento de Física; ArgentinaInternational Frequency Sensor Association2014-10info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/30150Aragon, Ricardo; Lombardi, Rina; Field Effect Devices Sensitive to CO at Room Temperature; International Frequency Sensor Association; Sensors and Transducers; 180; 10; 10-2014; 80-842306-85151726-5479CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/http://www.sensorsportal.com/HTML/DIGEST/P_2442.htminfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2026-08-25T15:08:49Zoai:ri.conicet.gov.ar:11336/30150instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982026-08-25 15:08:50.233CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Field Effect Devices Sensitive to CO at Room Temperature
title Field Effect Devices Sensitive to CO at Room Temperature
spellingShingle Field Effect Devices Sensitive to CO at Room Temperature
Aragon, Ricardo
Co
Fet Sensor
Room Temperature
Co-Corrole
Photodesorption
title_short Field Effect Devices Sensitive to CO at Room Temperature
title_full Field Effect Devices Sensitive to CO at Room Temperature
title_fullStr Field Effect Devices Sensitive to CO at Room Temperature
title_full_unstemmed Field Effect Devices Sensitive to CO at Room Temperature
title_sort Field Effect Devices Sensitive to CO at Room Temperature
dc.creator.none.fl_str_mv Aragon, Ricardo
Lombardi, Rina
author Aragon, Ricardo
author_facet Aragon, Ricardo
Lombardi, Rina
author_role author
author2 Lombardi, Rina
author2_role author
dc.subject.none.fl_str_mv Co
Fet Sensor
Room Temperature
Co-Corrole
Photodesorption
topic Co
Fet Sensor
Room Temperature
Co-Corrole
Photodesorption
purl_subject.fl_str_mv https://purl.org/becyt/ford/2.5
https://purl.org/becyt/ford/2
dc.description.none.fl_txt_mv [5,10,15-Tris(2,6-dichlorophenyl)corrolate]cobalt(III) was used to chemisorb CO selectively, on the gap-gate of MOS capacitors and the state of charge monitored by voltage shifts of the photocurrent induced by pulsed illumination under constant D.C. bias, proportionally to CO concentration in air. Negative chemically induced charges at room temperature induce positive responses above and negative shifts below the threshold voltage, conforming to acceptor behavior, and the dynamic range (125 ppm) is limited by the silicon doping concentration. The linear proportionality between CO concentration and surface charge (6.46 [ppm.m2.µC-1]) corresponds to the low concentration limit of the Langmuir isotherm. Sluggish CO desorption can be compensated by photo stimulation at 395 nm.
Fil: Aragon, Ricardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Unidad de Investigación y Desarrollo Estratégico para la Defensa. Ministerio de Defensa. Unidad de Investigación y Desarrollo Estratégico para la Defensa; Argentina. Universidad de Buenos Aires. Facultad de Ingeniería. Departamento de Física; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Instituto de Investigaciones Científicas y Técnicas de las Fuerzas Armadas. Centro de Investigaciones en Sólidos; Argentina
Fil: Lombardi, Rina. Universidad de Buenos Aires. Facultad de Ingeniería. Departamento de Física; Argentina
description [5,10,15-Tris(2,6-dichlorophenyl)corrolate]cobalt(III) was used to chemisorb CO selectively, on the gap-gate of MOS capacitors and the state of charge monitored by voltage shifts of the photocurrent induced by pulsed illumination under constant D.C. bias, proportionally to CO concentration in air. Negative chemically induced charges at room temperature induce positive responses above and negative shifts below the threshold voltage, conforming to acceptor behavior, and the dynamic range (125 ppm) is limited by the silicon doping concentration. The linear proportionality between CO concentration and surface charge (6.46 [ppm.m2.µC-1]) corresponds to the low concentration limit of the Langmuir isotherm. Sluggish CO desorption can be compensated by photo stimulation at 395 nm.
publishDate 2014
dc.date.none.fl_str_mv 2014-10
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/30150
Aragon, Ricardo; Lombardi, Rina; Field Effect Devices Sensitive to CO at Room Temperature; International Frequency Sensor Association; Sensors and Transducers; 180; 10; 10-2014; 80-84
2306-8515
1726-5479
CONICET Digital
CONICET
url http://hdl.handle.net/11336/30150
identifier_str_mv Aragon, Ricardo; Lombardi, Rina; Field Effect Devices Sensitive to CO at Room Temperature; International Frequency Sensor Association; Sensors and Transducers; 180; 10; 10-2014; 80-84
2306-8515
1726-5479
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://www.sensorsportal.com/HTML/DIGEST/P_2442.htm
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv International Frequency Sensor Association
publisher.none.fl_str_mv International Frequency Sensor Association
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1874775210176020480
score 13.265058

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