Growth temperature-induced interfacial degradation in superconducting NbN/insulator HfO2 bilayers

Autores
Verón Lagger, Franco; Sirena, Martin; Haberkorn, Nestor Fabian
Año de publicación
2025
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
This study reports on the electrical transport properties of NbN/HfO2 bilayers grown sequentially by reactive sputtering on c-Al2O3 substrates. An epitaxial (111) NbN layer, 10 nm thick, was deposited at 450 °C using an N2/argon mixture. Subsequently, an HfO2 layer with a nominal thickness of 10 nm was grown using a reactive O2/argon mixture at deposition temperatures ranging from room temperature to 450 °C. The crystalline structure was analyzed using X-ray diffraction. The electrical transport properties of the insulator layer were characterized by conductive atomic force microscopy at room temperature, while the superconducting properties of NbN were evaluated using a standard four-point configuration. Results indicate that increasing the deposition temperature of HfO2 causes chemical degradation and reduces the nominal thicknesses of both NbN and HfO2 layers due to interfacial reactions and Nb oxidation. This degradation adversely affects the electrical properties of the superconducting layers, specifically leading to a decrease in the superconducting critical temperature of NbN and an increase in the insulating properties of the HfO2 layer. The modifications in the properties of HfO2 are attributed not only to interfacial degradation but also to a probable reduction in structural disorder with increasing deposition temperature. Overall, these findings contribute to understanding the impact of interface disorder on electronic devices incorporating nitride and oxide layers.
Fil: Verón Lagger, Franco. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina
Fil: Sirena, Martin. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Oficina de Coordinacion Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Bariloche | Comision Nacional de Energia Atomica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Bariloche.; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina
Fil: Haberkorn, Nestor Fabian. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Oficina de Coordinacion Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Bariloche | Comision Nacional de Energia Atomica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Bariloche.; Argentina
Materia
thin films
ferroelectricity
superconductiviy
interface
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/288750
Acceder
id CONICETDig_a953f6426c8b95709a22996a76d9a483
oai_identifier_str oai:ri.conicet.gov.ar:11336/288750
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Growth temperature-induced interfacial degradation in superconducting NbN/insulator HfO2 bilayersVerón Lagger, FrancoSirena, MartinHaberkorn, Nestor Fabianthin filmsferroelectricitysuperconductiviyinterfacehttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1This study reports on the electrical transport properties of NbN/HfO2 bilayers grown sequentially by reactive sputtering on c-Al2O3 substrates. An epitaxial (111) NbN layer, 10 nm thick, was deposited at 450 °C using an N2/argon mixture. Subsequently, an HfO2 layer with a nominal thickness of 10 nm was grown using a reactive O2/argon mixture at deposition temperatures ranging from room temperature to 450 °C. The crystalline structure was analyzed using X-ray diffraction. The electrical transport properties of the insulator layer were characterized by conductive atomic force microscopy at room temperature, while the superconducting properties of NbN were evaluated using a standard four-point configuration. Results indicate that increasing the deposition temperature of HfO2 causes chemical degradation and reduces the nominal thicknesses of both NbN and HfO2 layers due to interfacial reactions and Nb oxidation. This degradation adversely affects the electrical properties of the superconducting layers, specifically leading to a decrease in the superconducting critical temperature of NbN and an increase in the insulating properties of the HfO2 layer. The modifications in the properties of HfO2 are attributed not only to interfacial degradation but also to a probable reduction in structural disorder with increasing deposition temperature. Overall, these findings contribute to understanding the impact of interface disorder on electronic devices incorporating nitride and oxide layers.Fil: Verón Lagger, Franco. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Sirena, Martin. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Oficina de Coordinacion Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Bariloche | Comision Nacional de Energia Atomica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Bariloche.; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Haberkorn, Nestor Fabian. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Oficina de Coordinacion Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Bariloche | Comision Nacional de Energia Atomica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Bariloche.; ArgentinaElsevier2025-03info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/288750Verón Lagger, Franco; Sirena, Martin; Haberkorn, Nestor Fabian; Growth temperature-induced interfacial degradation in superconducting NbN/insulator HfO2 bilayers; Elsevier; Next Materials; 8; 3-2025; 100581-1005872949-8228CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S2949822825000991info:eu-repo/semantics/altIdentifier/doi/10.1016/j.nxmate.2025.100581info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2026-08-25T14:37:40Zoai:ri.conicet.gov.ar:11336/288750instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982026-08-25 14:37:41.269CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Growth temperature-induced interfacial degradation in superconducting NbN/insulator HfO2 bilayers
title Growth temperature-induced interfacial degradation in superconducting NbN/insulator HfO2 bilayers
spellingShingle Growth temperature-induced interfacial degradation in superconducting NbN/insulator HfO2 bilayers
Verón Lagger, Franco
thin films
ferroelectricity
superconductiviy
interface
title_short Growth temperature-induced interfacial degradation in superconducting NbN/insulator HfO2 bilayers
title_full Growth temperature-induced interfacial degradation in superconducting NbN/insulator HfO2 bilayers
title_fullStr Growth temperature-induced interfacial degradation in superconducting NbN/insulator HfO2 bilayers
title_full_unstemmed Growth temperature-induced interfacial degradation in superconducting NbN/insulator HfO2 bilayers
title_sort Growth temperature-induced interfacial degradation in superconducting NbN/insulator HfO2 bilayers
dc.creator.none.fl_str_mv Verón Lagger, Franco
Sirena, Martin
Haberkorn, Nestor Fabian
author Verón Lagger, Franco
author_facet Verón Lagger, Franco
Sirena, Martin
Haberkorn, Nestor Fabian
author_role author
author2 Sirena, Martin
Haberkorn, Nestor Fabian
author2_role author
author
dc.subject.none.fl_str_mv thin films
ferroelectricity
superconductiviy
interface
topic thin films
ferroelectricity
superconductiviy
interface
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv This study reports on the electrical transport properties of NbN/HfO2 bilayers grown sequentially by reactive sputtering on c-Al2O3 substrates. An epitaxial (111) NbN layer, 10 nm thick, was deposited at 450 °C using an N2/argon mixture. Subsequently, an HfO2 layer with a nominal thickness of 10 nm was grown using a reactive O2/argon mixture at deposition temperatures ranging from room temperature to 450 °C. The crystalline structure was analyzed using X-ray diffraction. The electrical transport properties of the insulator layer were characterized by conductive atomic force microscopy at room temperature, while the superconducting properties of NbN were evaluated using a standard four-point configuration. Results indicate that increasing the deposition temperature of HfO2 causes chemical degradation and reduces the nominal thicknesses of both NbN and HfO2 layers due to interfacial reactions and Nb oxidation. This degradation adversely affects the electrical properties of the superconducting layers, specifically leading to a decrease in the superconducting critical temperature of NbN and an increase in the insulating properties of the HfO2 layer. The modifications in the properties of HfO2 are attributed not only to interfacial degradation but also to a probable reduction in structural disorder with increasing deposition temperature. Overall, these findings contribute to understanding the impact of interface disorder on electronic devices incorporating nitride and oxide layers.
Fil: Verón Lagger, Franco. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina
Fil: Sirena, Martin. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Oficina de Coordinacion Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Bariloche | Comision Nacional de Energia Atomica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Bariloche.; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina
Fil: Haberkorn, Nestor Fabian. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Cientificas y Tecnicas. Oficina de Coordinacion Administrativa Ciudad Universitaria. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Bariloche | Comision Nacional de Energia Atomica. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia. Unidad Ejecutora Instituto de Nanociencia y Nanotecnologia - Nodo Bariloche.; Argentina
description This study reports on the electrical transport properties of NbN/HfO2 bilayers grown sequentially by reactive sputtering on c-Al2O3 substrates. An epitaxial (111) NbN layer, 10 nm thick, was deposited at 450 °C using an N2/argon mixture. Subsequently, an HfO2 layer with a nominal thickness of 10 nm was grown using a reactive O2/argon mixture at deposition temperatures ranging from room temperature to 450 °C. The crystalline structure was analyzed using X-ray diffraction. The electrical transport properties of the insulator layer were characterized by conductive atomic force microscopy at room temperature, while the superconducting properties of NbN were evaluated using a standard four-point configuration. Results indicate that increasing the deposition temperature of HfO2 causes chemical degradation and reduces the nominal thicknesses of both NbN and HfO2 layers due to interfacial reactions and Nb oxidation. This degradation adversely affects the electrical properties of the superconducting layers, specifically leading to a decrease in the superconducting critical temperature of NbN and an increase in the insulating properties of the HfO2 layer. The modifications in the properties of HfO2 are attributed not only to interfacial degradation but also to a probable reduction in structural disorder with increasing deposition temperature. Overall, these findings contribute to understanding the impact of interface disorder on electronic devices incorporating nitride and oxide layers.
publishDate 2025
dc.date.none.fl_str_mv 2025-03
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/288750
Verón Lagger, Franco; Sirena, Martin; Haberkorn, Nestor Fabian; Growth temperature-induced interfacial degradation in superconducting NbN/insulator HfO2 bilayers; Elsevier; Next Materials; 8; 3-2025; 100581-100587
2949-8228
CONICET Digital
CONICET
url http://hdl.handle.net/11336/288750
identifier_str_mv Verón Lagger, Franco; Sirena, Martin; Haberkorn, Nestor Fabian; Growth temperature-induced interfacial degradation in superconducting NbN/insulator HfO2 bilayers; Elsevier; Next Materials; 8; 3-2025; 100581-100587
2949-8228
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://www.sciencedirect.com/science/article/pii/S2949822825000991
info:eu-repo/semantics/altIdentifier/doi/10.1016/j.nxmate.2025.100581
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier
publisher.none.fl_str_mv Elsevier
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 13.265058

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