Influence of ion implantation on the magnetic and transport properties of manganite films

Autores
Sirena, Martin; Zimmers, A.; Haberkorn, Nestor Fabian; Kaul, Enrique Eduardo; Steren, Laura Beatriz; Lesueur, J.; Wolf, T.; Le Gall, Y.; Grob, J. J.; Faini, G.
Año de publicación
2010
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
We have used ions irradiation to generate controlled structural disorder in thin manganite films.Conductive atomic force microscopy (CAFM) and transport and magnetic measurements were performed toanalyze the influence of the implantation process in the physical properties of the films. CAFM images showregions with different conductivity values, probably due to the random distribution of point defect. Thetransport and magnetic properties of these systems are interpreted in this context. Metal-insulator transition canbe described in the frame of a percolative model. Disorder increases the distance between conducting regions,lowering the observed TMI. Point-defect disorder increases localization of the carriers due to increased disorderand locally enhanced strain field. Remarkably, even with the inhomogeneous nature of the samples, no sign oflow-field magnetoresistance was found. Point-defect disorder decreases the system magnetization but does notseem to change the magnetic transition temperature. The coercive field of the samples increases linearly withincreasing disorder but decreases when disorder is higher than a critical value.
Fil: Sirena, Martin. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina
Fil: Zimmers, A.. Centre National de la Recherche Scientifique; Francia
Fil: Haberkorn, Nestor Fabian. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina
Fil: Kaul, Enrique Eduardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina
Fil: Steren, Laura Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina
Fil: Lesueur, J.. Centre National de la Recherche Scientifique; Francia
Fil: Wolf, T.. Centre National de la Recherche Scientifique; Francia
Fil: Le Gall, Y.. Institut d’Électronique du Solide et des Systèmes; Francia
Fil: Grob, J. J.. Institut d’Électronique du Solide et des Systèmes; Francia
Fil: Faini, G.. Centre National de la Recherche Scientifique; Francia
Materia
MANGANITE
THIN-FILMS
ION-IRRADIATION-DAMAGE
ELECTRIC TRANSPORT
Nivel de accesibilidad
acceso abierto
Condiciones de uso
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
Repositorio
CONICET Digital (CONICET)
Institución
Consejo Nacional de Investigaciones Científicas y Técnicas
OAI Identificador
oai:ri.conicet.gov.ar:11336/284530
Acceder
id CONICETDig_b0aafbb7de86c8bbdeccb4306166e51b
oai_identifier_str oai:ri.conicet.gov.ar:11336/284530
network_acronym_str CONICETDig
repository_id_str 3498
network_name_str CONICET Digital (CONICET)
spelling Influence of ion implantation on the magnetic and transport properties of manganite filmsSirena, MartinZimmers, A.Haberkorn, Nestor FabianKaul, Enrique EduardoSteren, Laura BeatrizLesueur, J.Wolf, T.Le Gall, Y.Grob, J. J.Faini, G.MANGANITETHIN-FILMSION-IRRADIATION-DAMAGEELECTRIC TRANSPORThttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We have used ions irradiation to generate controlled structural disorder in thin manganite films.Conductive atomic force microscopy (CAFM) and transport and magnetic measurements were performed toanalyze the influence of the implantation process in the physical properties of the films. CAFM images showregions with different conductivity values, probably due to the random distribution of point defect. Thetransport and magnetic properties of these systems are interpreted in this context. Metal-insulator transition canbe described in the frame of a percolative model. Disorder increases the distance between conducting regions,lowering the observed TMI. Point-defect disorder increases localization of the carriers due to increased disorderand locally enhanced strain field. Remarkably, even with the inhomogeneous nature of the samples, no sign oflow-field magnetoresistance was found. Point-defect disorder decreases the system magnetization but does notseem to change the magnetic transition temperature. The coercive field of the samples increases linearly withincreasing disorder but decreases when disorder is higher than a critical value.Fil: Sirena, Martin. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; ArgentinaFil: Zimmers, A.. Centre National de la Recherche Scientifique; FranciaFil: Haberkorn, Nestor Fabian. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Kaul, Enrique Eduardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Steren, Laura Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; ArgentinaFil: Lesueur, J.. Centre National de la Recherche Scientifique; FranciaFil: Wolf, T.. Centre National de la Recherche Scientifique; FranciaFil: Le Gall, Y.. Institut d’Électronique du Solide et des Systèmes; FranciaFil: Grob, J. J.. Institut d’Électronique du Solide et des Systèmes; FranciaFil: Faini, G.. Centre National de la Recherche Scientifique; FranciaAmerican Physical Society2010-04info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/284530Sirena, Martin; Zimmers, A.; Haberkorn, Nestor Fabian; Kaul, Enrique Eduardo; Steren, Laura Beatriz; et al.; Influence of ion implantation on the magnetic and transport properties of manganite films; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 81; 4-2010; 1344391-13443970163-18291098-0121CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/url/https://journals.aps.org/prb/abstract/10.1103/PhysRevB.81.134439info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.81.134439info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2026-08-25T14:34:22Zoai:ri.conicet.gov.ar:11336/284530instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982026-08-25 14:34:22.492CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Influence of ion implantation on the magnetic and transport properties of manganite films
title Influence of ion implantation on the magnetic and transport properties of manganite films
spellingShingle Influence of ion implantation on the magnetic and transport properties of manganite films
Sirena, Martin
MANGANITE
THIN-FILMS
ION-IRRADIATION-DAMAGE
ELECTRIC TRANSPORT
title_short Influence of ion implantation on the magnetic and transport properties of manganite films
title_full Influence of ion implantation on the magnetic and transport properties of manganite films
title_fullStr Influence of ion implantation on the magnetic and transport properties of manganite films
title_full_unstemmed Influence of ion implantation on the magnetic and transport properties of manganite films
title_sort Influence of ion implantation on the magnetic and transport properties of manganite films
dc.creator.none.fl_str_mv Sirena, Martin
Zimmers, A.
Haberkorn, Nestor Fabian
Kaul, Enrique Eduardo
Steren, Laura Beatriz
Lesueur, J.
Wolf, T.
Le Gall, Y.
Grob, J. J.
Faini, G.
author Sirena, Martin
author_facet Sirena, Martin
Zimmers, A.
Haberkorn, Nestor Fabian
Kaul, Enrique Eduardo
Steren, Laura Beatriz
Lesueur, J.
Wolf, T.
Le Gall, Y.
Grob, J. J.
Faini, G.
author_role author
author2 Zimmers, A.
Haberkorn, Nestor Fabian
Kaul, Enrique Eduardo
Steren, Laura Beatriz
Lesueur, J.
Wolf, T.
Le Gall, Y.
Grob, J. J.
Faini, G.
author2_role author
author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv MANGANITE
THIN-FILMS
ION-IRRADIATION-DAMAGE
ELECTRIC TRANSPORT
topic MANGANITE
THIN-FILMS
ION-IRRADIATION-DAMAGE
ELECTRIC TRANSPORT
purl_subject.fl_str_mv https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
dc.description.none.fl_txt_mv We have used ions irradiation to generate controlled structural disorder in thin manganite films.Conductive atomic force microscopy (CAFM) and transport and magnetic measurements were performed toanalyze the influence of the implantation process in the physical properties of the films. CAFM images showregions with different conductivity values, probably due to the random distribution of point defect. Thetransport and magnetic properties of these systems are interpreted in this context. Metal-insulator transition canbe described in the frame of a percolative model. Disorder increases the distance between conducting regions,lowering the observed TMI. Point-defect disorder increases localization of the carriers due to increased disorderand locally enhanced strain field. Remarkably, even with the inhomogeneous nature of the samples, no sign oflow-field magnetoresistance was found. Point-defect disorder decreases the system magnetization but does notseem to change the magnetic transition temperature. The coercive field of the samples increases linearly withincreasing disorder but decreases when disorder is higher than a critical value.
Fil: Sirena, Martin. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina
Fil: Zimmers, A.. Centre National de la Recherche Scientifique; Francia
Fil: Haberkorn, Nestor Fabian. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina
Fil: Kaul, Enrique Eduardo. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina
Fil: Steren, Laura Beatriz. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Patagonia Norte; Argentina. Comisión Nacional de Energía Atómica. Gerencia del Área de Energía Nuclear. Instituto Balseiro; Argentina
Fil: Lesueur, J.. Centre National de la Recherche Scientifique; Francia
Fil: Wolf, T.. Centre National de la Recherche Scientifique; Francia
Fil: Le Gall, Y.. Institut d’Électronique du Solide et des Systèmes; Francia
Fil: Grob, J. J.. Institut d’Électronique du Solide et des Systèmes; Francia
Fil: Faini, G.. Centre National de la Recherche Scientifique; Francia
description We have used ions irradiation to generate controlled structural disorder in thin manganite films.Conductive atomic force microscopy (CAFM) and transport and magnetic measurements were performed toanalyze the influence of the implantation process in the physical properties of the films. CAFM images showregions with different conductivity values, probably due to the random distribution of point defect. Thetransport and magnetic properties of these systems are interpreted in this context. Metal-insulator transition canbe described in the frame of a percolative model. Disorder increases the distance between conducting regions,lowering the observed TMI. Point-defect disorder increases localization of the carriers due to increased disorderand locally enhanced strain field. Remarkably, even with the inhomogeneous nature of the samples, no sign oflow-field magnetoresistance was found. Point-defect disorder decreases the system magnetization but does notseem to change the magnetic transition temperature. The coercive field of the samples increases linearly withincreasing disorder but decreases when disorder is higher than a critical value.
publishDate 2010
dc.date.none.fl_str_mv 2010-04
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/284530
Sirena, Martin; Zimmers, A.; Haberkorn, Nestor Fabian; Kaul, Enrique Eduardo; Steren, Laura Beatriz; et al.; Influence of ion implantation on the magnetic and transport properties of manganite films; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 81; 4-2010; 1344391-1344397
0163-1829
1098-0121
CONICET Digital
CONICET
url http://hdl.handle.net/11336/284530
identifier_str_mv Sirena, Martin; Zimmers, A.; Haberkorn, Nestor Fabian; Kaul, Enrique Eduardo; Steren, Laura Beatriz; et al.; Influence of ion implantation on the magnetic and transport properties of manganite films; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 81; 4-2010; 1344391-1344397
0163-1829
1098-0121
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/https://journals.aps.org/prb/abstract/10.1103/PhysRevB.81.134439
info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.81.134439
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1874774206325981184
score 13.265058

Publicaciones similares