Standards for the Characterization of 2 Endurance in Resistive Switching Devices

Autores
Palumbo, Felix
Año de publicación
2021
Idioma
inglés
Tipo de recurso
artículo
Estado
versión publicada
Descripción
Resistive switching (RS) devices are emerging 11 electronic components that could have applications in multiple 12 types of integrated circuits, including electronic memories, true 13 random number generators, radiofrequency switches, neuro- 14 morphic vision sensors, and artificial neural networks. The 15 main factor hindering the massive employment of RS devices in 16 commercial circuits is related to variability and reliability issues, 17 which are usually evaluated through switching endurance tests. 18 However, we note that most studies that claimed high 19 endurances >106 cycles were based on resistance versus cycle 20 plots that contain very few data points (in many cases even 21 <20), and which are collected in only one device. We 22 recommend not to use such a characterization method because 23 it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and 24 it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices 25 and in many cases has exaggerated their potential. This article proposes and describes a method for the correct 26 characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point 27 per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in 28 more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products.
Fil: UIDI Conicet
Peer Reviewed
Materia
Breakdown
Nivel de accesibilidad
acceso abierto
Condiciones de uso
2024-04-04T19:18:39Z
Repositorio
Repositorio Institucional Abierto (UTN)
Institución
Universidad Tecnológica Nacional
OAI Identificador
oai:ria.utn.edu.ar:20.500.12272/10320
Acceder
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repository_id_str a
network_name_str Repositorio Institucional Abierto (UTN)
spelling Standards for the Characterization of 2 Endurance in Resistive Switching DevicesPalumbo, FelixBreakdownResistive switching (RS) devices are emerging 11 electronic components that could have applications in multiple 12 types of integrated circuits, including electronic memories, true 13 random number generators, radiofrequency switches, neuro- 14 morphic vision sensors, and artificial neural networks. The 15 main factor hindering the massive employment of RS devices in 16 commercial circuits is related to variability and reliability issues, 17 which are usually evaluated through switching endurance tests. 18 However, we note that most studies that claimed high 19 endurances &gt;106 cycles were based on resistance versus cycle 20 plots that contain very few data points (in many cases even 21 &lt;20), and which are collected in only one device. We 22 recommend not to use such a characterization method because 23 it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and 24 it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices 25 and in many cases has exaggerated their potential. This article proposes and describes a method for the correct 26 characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point 27 per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in 28 more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products.Fil: UIDI ConicetPeer Reviewed2024-04-04T19:18:39Z2024-04-04T19:18:39Z2021-10-07info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloplainapplication/pdfhttp://hdl.handle.net/20.500.12272/1032010.1021/acsnano.1c06980enginfo:eu-repo/semantics/openAccess2024-04-04T19:18:39Zhttp://creativecommons.org/publicdomain/zero/1.0/CC0 1.0 Universalinvestigacionreponame:Repositorio Institucional Abierto (UTN)instname:Universidad Tecnológica Nacional2026-09-24T12:48:42Zoai:ria.utn.edu.ar:20.500.12272/10320instacron:UTNInstitucionalhttp://ria.utn.edu.ar/Universidad públicaNo correspondehttp://ria.utn.edu.ar/oaigestionria@rec.utn.edu.ar; fsuarez@rec.utn.edu.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:a2026-09-24 12:48:42.539Repositorio Institucional Abierto (UTN) - Universidad Tecnológica Nacionalfalse
dc.title.none.fl_str_mv Standards for the Characterization of 2 Endurance in Resistive Switching Devices
title Standards for the Characterization of 2 Endurance in Resistive Switching Devices
spellingShingle Standards for the Characterization of 2 Endurance in Resistive Switching Devices
Palumbo, Felix
Breakdown
title_short Standards for the Characterization of 2 Endurance in Resistive Switching Devices
title_full Standards for the Characterization of 2 Endurance in Resistive Switching Devices
title_fullStr Standards for the Characterization of 2 Endurance in Resistive Switching Devices
title_full_unstemmed Standards for the Characterization of 2 Endurance in Resistive Switching Devices
title_sort Standards for the Characterization of 2 Endurance in Resistive Switching Devices
dc.creator.none.fl_str_mv Palumbo, Felix
author Palumbo, Felix
author_facet Palumbo, Felix
author_role author
dc.subject.none.fl_str_mv Breakdown
topic Breakdown
dc.description.none.fl_txt_mv Resistive switching (RS) devices are emerging 11 electronic components that could have applications in multiple 12 types of integrated circuits, including electronic memories, true 13 random number generators, radiofrequency switches, neuro- 14 morphic vision sensors, and artificial neural networks. The 15 main factor hindering the massive employment of RS devices in 16 commercial circuits is related to variability and reliability issues, 17 which are usually evaluated through switching endurance tests. 18 However, we note that most studies that claimed high 19 endurances &gt;106 cycles were based on resistance versus cycle 20 plots that contain very few data points (in many cases even 21 &lt;20), and which are collected in only one device. We 22 recommend not to use such a characterization method because 23 it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and 24 it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices 25 and in many cases has exaggerated their potential. This article proposes and describes a method for the correct 26 characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point 27 per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in 28 more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products.
Fil: UIDI Conicet
Peer Reviewed
description Resistive switching (RS) devices are emerging 11 electronic components that could have applications in multiple 12 types of integrated circuits, including electronic memories, true 13 random number generators, radiofrequency switches, neuro- 14 morphic vision sensors, and artificial neural networks. The 15 main factor hindering the massive employment of RS devices in 16 commercial circuits is related to variability and reliability issues, 17 which are usually evaluated through switching endurance tests. 18 However, we note that most studies that claimed high 19 endurances &gt;106 cycles were based on resistance versus cycle 20 plots that contain very few data points (in many cases even 21 &lt;20), and which are collected in only one device. We 22 recommend not to use such a characterization method because 23 it is highly inaccurate and unreliable (i.e., it cannot reliably demonstrate that the device effectively switches in every cycle and 24 it ignores cycle-to-cycle and device-to-device variability). This has created a blurry vision of the real performance of RS devices 25 and in many cases has exaggerated their potential. This article proposes and describes a method for the correct 26 characterization of switching endurance in RS devices; this method aims to construct endurance plots showing one data point 27 per cycle and resistive state and combine data from multiple devices. Adopting this recommended method should result in 28 more reliable literature in the field of RS technologies, which should accelerate their integration in commercial products.
publishDate 2021
dc.date.none.fl_str_mv 2021-10-07
2024-04-04T19:18:39Z
2024-04-04T19:18:39Z
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/20.500.12272/10320
10.1021/acsnano.1c06980
url http://hdl.handle.net/20.500.12272/10320
identifier_str_mv 10.1021/acsnano.1c06980
dc.language.none.fl_str_mv eng
language eng
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
2024-04-04T19:18:39Z
http://creativecommons.org/publicdomain/zero/1.0/
CC0 1.0 Universal
investigacion
eu_rights_str_mv openAccess
rights_invalid_str_mv 2024-04-04T19:18:39Z
http://creativecommons.org/publicdomain/zero/1.0/
CC0 1.0 Universal
investigacion
dc.format.none.fl_str_mv plain
application/pdf
dc.source.none.fl_str_mv reponame:Repositorio Institucional Abierto (UTN)
instname:Universidad Tecnológica Nacional
reponame_str Repositorio Institucional Abierto (UTN)
collection Repositorio Institucional Abierto (UTN)
instname_str Universidad Tecnológica Nacional
repository.name.fl_str_mv Repositorio Institucional Abierto (UTN) - Universidad Tecnológica Nacional
repository.mail.fl_str_mv gestionria@rec.utn.edu.ar; fsuarez@rec.utn.edu.ar
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score 13.265058

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